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AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations. Standard Product AO4702 is Pb-free (meets ROHS & Sony 259 specifications). AO4702L is a Green Product ordering option. AO4702and AO4702L are electrically identical.
Features
VDS (V) = 30V ID = 11A (VGS = 10V) RDS(ON) < 16m (VGS = 10V) RDS(ON) < 25m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D S S S G D D D D
K
G S A
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter MOSFET Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current
B
Schottky
Units V V A
VGS TA=70C ID IDM VKA TA=25C
A B
20 11 9.3 50 30 4.4 3.2 3 2 -55 to 150 30 3 2 -55 to 150
Schottky reverse voltage Continuous Forward Current TA=70C TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range
V A
IF IFM PD TJ, TSTG
Pulsed Diode Forward Current
W C
Alpha & Omega Semiconductor, Ltd.
AO4702
Thermal Characteristics: MOSFET Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics: Schottky Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 36 67 25
Max 40 75 30
Units C/W C/W C/W
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 5 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4702
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=11A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=11A IS=1A,VGS=0V Diode + Schottky Forward Voltage Maximum Body-Diode + Schottky Continuous Current TJ=125C 1 40 13.4 16.8 20 25 0.45 0.5 5 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 212 121 0.7 19.8 VGS=10V, VDS=15V, ID=11A 9.8 2.5 3.5 4.5 VGS=10V, VDS=15V, RL=1.35, RGEN=3 IF=11A, dI/dt=100A/s IF=11A, dI/dt=100A/s 3.9 17.4 3.2 19 9 7 7 30 5.7 23 11 0.85 24 12 1250 16 21 25 1.8 Min 30 0.007 3.2 12 0.05 10 20 100 3 mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC Typ Max Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current (Set by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET+Schottky) Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode + Schottky Reverse Recovery Time Body Diode + Schottky Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 5: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 24 VGS=4.5V Normalized On-Resistance 22 20 RDS(ON) (m) 18 16 14 12 10 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 50 ID=11A RDS(ON) (m) IS (A) 40 30 125C 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-03 25C 1.0E-04 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E-01 1.0E-02 VGS=10V 1.6 VGS=10V ID=11A 1.4 4V 10V 4.5V 3.5V 12 ID(A) 125C 8 VGS=3V 4 0 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25C 20 16 VDS=5V
1.2
VGS=4.5V
1
1.0E+01 125C 1.0E+00 25
Alpha & Omega Semiconductor, Ltd.
AO4702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=11A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 5 10 15 20 25 30
VDS (Volts) Figure 8: Capacitance Characteristics
100.0 RDS(ON) limited ID (Amps) 10.0 100s 1ms 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 10s Power (W)
50 40 30 20 10 0 0.001
TJ(Max)=150C TA=25C
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD 0.1 Single Pulse Ton T
0.01 0.00001
0.0001
Pulse 0.1 Width (s) 0.001 0.01 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.

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